High quality factor GaAs microcavity with buried bullseye defects
نویسندگان
چکیده
منابع مشابه
Chaotic microcavity laser with high quality factor and unidirectional output
Qinghai Song, Wei Fang, Boyang Liu, Seng-Tiong Ho, Glenn S. Solomon, and Hui Cao* Department of Applied Physics, Yale University, New Haven, Connecticut 06520-8482, USA Joint Quantum Institute, NIST and University of Maryland, Gaithersburg, Maryland 20899, USA Department of Electrical Engineering and Computing Science, Northwestern University, Evanston, Illinois 60208, USA Received 31 May 2009;...
متن کاملExperimental demonstration of a high quality factor photonic crystal microcavity
fonts rotating euscript subfigure enumerate hhline threeparttable supertabular [1]1 [1]1 [1]1 [1]1 [1]1 [1]1 [1]∇× 1RTGG0kGkRaibGgDDDD{dν |sν}÷[1]∇ · 1[1]∇1 document apsrev Experimental demonstration of a high quality factor photonic crystal microcavity Kartik Srinivasan Paul E. Barclay Oskar Painter Department of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA. pho...
متن کاملHigh quality factor microcavity lasers realized by circular photonic crystal with isotropic photonic band gap effect
The photonic band gap PBG effect and its isotropy of sunflower-type circular photonic crystal CPC are obtained and investigated from the transmission spectra performed by finite-difference time-domain FDTD method. The PBG directional width variation is found to be only 6.7%. A well-confined whispering gallery mode WGM with azimuthal number of 6 is obtained by FDTD simulation from the CPC microc...
متن کاملPhotonic crystal heteroslab-edge microcavity with high quality factor surface mode for index sensing
In this report, we propose a photonic crystal heteroslab-edge microcavity design for optical index sensing, where the high quality Q surface mode is confined by mode-gap effect. By optimizing the barrier region of the microcavity, high Q factor of 6.6 105 is obtained in simulations. Lasing actions with high Q factor and low threshold of 6400 and 0.55 mW are obtained from the real devices. High ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Materials
سال: 2018
ISSN: 2475-9953
DOI: 10.1103/physrevmaterials.2.052201